The single crystals of (TlGaS2)1-x(TlInSe2)x (x = 0...0,5) solid solutions have been grown up. The photoelectric, X-ray dosimetric, dielectric and optical characteristics of the (TlGaS2)1-x(TlInSe2)x solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0,5. Both the photo- and X-ray sensitivity of these solid solutions are higher than those of pure TlGaS2. The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS2)1-x(TlInSe2)x solid solutions have been established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0...0,3) have been investigated within 77...180 К temperature interval. It has been ascertained that, with increasing x in (TlGaS2)1-x(TlInSe2)x solid solutions, the width of their forbidden gap decreases.

  Повний текст PDF - 254.253 Kb    Зміст випуску     Цитування публікації

  Якщо, ви не знайшли інформацію про автора(ів) публікації, маєте бажання виправити або відобразити більш докладну інформацію про науковців України запрошуємо заповнити "Анкету науковця"